The goal of SGAN-Next is to develop a European GaN on SiC MMIC process for high frequency operating devices (Q band and beyond) targeting flexible payloads for LEO/GEO applications

The main objective of the SGAN-Next project is the development of an European GaN on SiC MMIC foundry process and demonstrate outstanding performance at high frequency with the design of efficient and robust SSPA, LNA and switch devices. For this purpose, the project includes an industrial foundry (UMS), an epitaxy manufacturer (SweGaN) and a research foundry (FBH) that will work in process improvement to boost performance. Moreover, the consortium includes the two main European satellite prime contractors (ADS and TAS), a satellite equipment manufacturer (SENER) and two Universities (UNIBO and UAB) with expertise in SSPA research and microwave electron device characterization and modelling

Objectives

The goal of SGAN-Next is to develop a European GaN on SiC MMIC process for high frequency operating devices (Q band and beyond) targeting flexible payloads for LEO/GEO applications

Main Objectives

Technical reliability assessment for space qualification of European GaN on SiC MMIC foundry process

High frequency operation of European GaN on SiC devices

European GaN epitaxy supply chain

Development of Q-band HPA components for LEO flexible antenna

Development of Q-band HPA components for GEO flexible antennas

Development of robust RF front-end component