WavesLab is seeking a motivated Junior RF Designer to join our cutting-edge research team focused on high-efficiency power amplifiers based on GaN (Gallium Nitride) technology. As part of our dynamic and innovative environment, you will contribute to the design, simulation, and testing of RF and microwave circuits for next-generation wireless and radar systems. Responsibilities: Design and simulate RF power amplifier circuits using GaN technology Assist in PCB layout, prototyping, and lab validation Collaborate with senior researchers and PhD students on experimental setups and publications Analyze and optimize amplifier performance for linearity, efficiency, and power output. Requirements: Bachelor’s or Master’s degree in Electrical Engineering or a related field Basic understanding of RF/microwave design principles Familiarity with CAD tools (e.g., ADS, HFSS, or similar) Hands-on lab experience is a plus Eagerness to learn and contribute to a research-focused team What We Offer: A collaborative academic environment Access to state-of-the-art measurement equipment and design tools Opportunities for professional development and publication Mentorship from leading experts in RF and GaN technologies To apply, please send your CV, a short cover letter, and academic transcripts to [jordi.verdu@uab.cat]. Join us at WavesLab and shape the future of high-frequency electronics.