SGaN-Next is a European research and innovation project focused on the development of advanced Gallium Nitride (GaN) on Silicon Carbide (SiC) technologies for next-generation space communications systems. Funded under the Horizon Europe programme within the framework of European technological non-dependence and competitiveness in space, the project aims to establish a fully European high-frequency GaN supply chain capable of supporting future satellite payloads operating in Q and V frequency bands.

The project addresses the growing demand for high-capacity and flexible satellite communications infrastructures, particularly in the context of Very High Throughput Satellites (VHTS) and Low Earth Orbit (LEO) constellations. As satellite systems evolve toward architectures based on active phased-array antennas and electronically steerable beams, the need for highly efficient and compact radio-frequency components has become increasingly critical. SGaN-Next seeks to answer these requirements through the development of high-frequency monolithic microwave integrated circuits (MMICs) capable of operating beyond Q-band frequencies while maintaining the reliability standards required for space applications.

A central objective of the programme is the qualification for space use of a European 0.1 µm GaN-on-SiC process developed by United Monolithic Semiconductors (UMS). The project also explores improvements in epitaxial growth, transistor design and thermal management in order to increase efficiency, power density and robustness at millimetre-wave frequencies. Particular emphasis is placed on the development of solid-state power amplifiers (SSPAs), low-noise amplifiers (LNAs) and RF switches intended for future satellite payloads.

The consortium behind SGaN-Next brings together industrial manufacturers, semiconductor foundries, research institutes and universities from across Europe. Coordinated by SENER, the project includes participation from Airbus Defence and Space, Thales Alenia Space, SweGaN, the Ferdinand-Braun-Institut, United Monolithic Semiconductors, the University of Bologna and the Universitat Autònoma de Barcelona, among others. The collaboration combines expertise in semiconductor fabrication, microwave engineering, packaging technologies and satellite system integration.

One of the strategic dimensions of the project is the strengthening of European technological sovereignty in advanced semiconductor technologies. The initiative aims to reduce dependence on non-European suppliers and export-controlled technologies, particularly those subject to ITAR restrictions. The development of a European GaN ecosystem is considered essential for ensuring resilience in critical space infrastructure and securing long-term competitiveness for the European space sector.

The technologies investigated within SGaN-Next are expected to contribute to future telecommunications satellites capable of supporting higher data throughput, improved beam flexibility and lower latency communications. The project also explores both hermetic and non-hermetic packaging approaches for different classes of space missions, including low-cost large-scale LEO constellations and high-reliability GEO platforms.

Beyond the space sector, the technological advances pursued by the project may also have applications in terrestrial telecommunications, radar systems, defence electronics and future 5G and 6G infrastructures. Through its combination of industrial development, scientific research and strategic autonomy objectives, SGaN-Next represents one of the European Union’s initiatives aimed at reinforcing Europe’s position in high-frequency semiconductor technologies for space and communications systems.